The impact of high-voltage drift N-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs

C. T. Huang, Bing-Yue Tsui, Hsu Ju Liu, Geeng Lih Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

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Chemical Compounds

Engineering & Materials Science