The impact of high-voltage drift N-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs

C. T. Huang, Bing-Yue Tsui, Hsu Ju Liu, Geeng Lih Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The impact of the high-voltage drift n-well (HVNW) and shallow trench isolation (STI) regions on the electrical characteristics of 32V symmetry and asymmetry n-channel laterally diffused drain MOSFET (N-LDMOS) were evaluated. Asymmetry structure has higher threshold voltage owing to the transient enhancement diffusion (TED) of boron near source region. The smaller extension of the HVNW to STI (E HVNW-STI ) for asymmetry structure exhibits a wider safe-operating-area (SOA) from the hot-carrier reliability point of view. To obtain a higher on-current, the E HVNW-STI should be optimized because the steep sidewall of the STI may force current to flow through a longer distance in the HVNW. Finally, increase of EHVNW-STI cannot efficiently increase breakdown voltage.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages267-270
Number of pages4
DOIs
StatePublished - 1 Dec 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

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