@inproceedings{300b3ea0188a4a93ac34905c01a17bde,
title = "The higher mobility fabrication and study for SiGe nanowire",
abstract = "The thin-film-transistor (TFT) was utilized to confirm that oxidation enhanced the SiGe drive current. It shows the incensement of current by the condition of higher temperature and longer oxidation time. The study above employed to the SiGe nanowire. The SiGe nanowire was fabricated by spacer technique and oxidized at different temperatures and times. All the SiGe films with different Ge concentrations were deposited on SiO2 by cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD). We utilize scanning electron microscopy (SEM) to observe the silicon germanium nanowire's size. In addition, from I-V measurement, it also shows that the current is improved for SiGe nanowire after oxidation.",
author = "Kow-Ming Chang and Kuo, {J. M.} and Chao, {W. C.} and Liang, {C. J.} and Chan, {J. M.} and Wu, {W. F.}",
year = "2007",
month = dec,
day = "1",
doi = "10.1149/1.2811695",
language = "English",
isbn = "9781604238891",
series = "ECS Transactions",
number = "13",
pages = "43--50",
booktitle = "ECS Trancsactions - General Society Student Poster Session",
edition = "13",
note = "null ; Conference date: 06-05-2007 Through 11-05-2007",
}