The higher mobility fabrication and study for SiGe nanowire

Kow-Ming Chang, J. M. Kuo, W. C. Chao, C. J. Liang, J. M. Chan, W. F. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The thin-film-transistor (TFT) was utilized to confirm that oxidation enhanced the SiGe drive current. It shows the incensement of current by the condition of higher temperature and longer oxidation time. The study above employed to the SiGe nanowire. The SiGe nanowire was fabricated by spacer technique and oxidized at different temperatures and times. All the SiGe films with different Ge concentrations were deposited on SiO2 by cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD). We utilize scanning electron microscopy (SEM) to observe the silicon germanium nanowire's size. In addition, from I-V measurement, it also shows that the current is improved for SiGe nanowire after oxidation.

Original languageEnglish
Title of host publicationECS Trancsactions - General Society Student Poster Session
Pages43-50
Number of pages8
Edition13
DOIs
StatePublished - 1 Dec 2007
EventGeneral Society Student Poster Session - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200711 May 2007

Publication series

NameECS Transactions
Number13
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGeneral Society Student Poster Session - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period6/05/0711/05/07

Fingerprint Dive into the research topics of 'The higher mobility fabrication and study for SiGe nanowire'. Together they form a unique fingerprint.

Cite this