The higher mobility fabrication and study for SiGe nanowire

Kow-Ming Chang, J. M. Kuo, W. C. Chao, C. J. Liang, J. M. Chan, W. F. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


The thin-film-transistor (TFT) was utilized to confirm that oxidation enhanced the SiGe drive current. It shows the incensement of current by the condition of higher temperature and longer oxidation time. The study above employed to the SiGe nanowire. The SiGe nanowire was fabricated by spacer technique and oxidized at different temperatures and times. All the SiGe films with different Ge concentrations were deposited on SiO2 by cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD). We utilize scanning electron microscopy (SEM) to observe the silicon germanium nanowire's size. In addition, from I-V measurement, it also shows that the current is improved for SiGe nanowire after oxidation.

Original languageEnglish
Title of host publicationECS Trancsactions - General Society Student Poster Session
Number of pages8
StatePublished - 1 Dec 2007
EventGeneral Society Student Poster Session - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200711 May 2007

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


ConferenceGeneral Society Student Poster Session - 211th ECS Meeting
CountryUnited States
CityChicago, IL

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