The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

S. D. Hersee*, P. A. Martin, Albert Chin, J. M. Ballingall

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - N d = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

Original languageEnglish
Pages (from-to)973-976
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number2
DOIs
StatePublished - 1 Dec 1991

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