The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

Cheng Hung Shih*, Ikai Lo, Shuo Ting You, Cheng Da Tsai, Bae Heng Tseng, Yun Feng Chen, Chiao Hsin Chen, Chuo Han Lee, Wei-I Lee, Gary Z.L. Hsu

*Corresponding author for this work

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Abstract

We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.

Original languageEnglish
Article number127120
JournalAIP Advances
Volume4
Issue number12
DOIs
StatePublished - 1 Dec 2014

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    Shih, C. H., Lo, I., You, S. T., Tsai, C. D., Tseng, B. H., Chen, Y. F., Chen, C. H., Lee, C. H., Lee, W-I., & Hsu, G. Z. L. (2014). The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN. AIP Advances, 4(12), [127120]. https://doi.org/10.1063/1.4904030