The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films

Pei Yen Lin, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1̄ 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated.

Original languageEnglish
Pages (from-to)397-400
Number of pages4
JournalMaterials Chemistry and Physics
Volume80
Issue number2
DOIs
StatePublished - 26 May 2003

Keywords

  • Epitaxial lateral overgrowth
  • GaN
  • Growth mechanism
  • Hydride vapor phase epitaxy
  • V defect

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