The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method

Hong Quan Nguyen, Hai Dang Trinh, Hung Wei Yu, Ching Hsiang Hsu, Chen Chen Chung, Binh Tinh Tran, Yuen Yee Wong, Thanh Hoa Phan Van, Quang Ho Luc, Diao Yuan Chiou, Chi Lang Nguyen, Chang Fu Dee, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Growth conditions have investigated for growing high quality In 0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2×106 cm-2 was achieved at growth temperature of 490 oC. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages246-248
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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