The Ge enhance the sensitivity for bio-sensor

Kow-Ming Chang; Jiun Ming Kuo; Wen Chan Chao; Chia Jung Liang; Heng Hsin Wu; Wen Hsien Tzeng; Tzu Liu Wu

doi:10.1109/INEC.2008.4585607

The Ge enhance the sensitivity for bio-sensor

Kow-Ming Chang^*, Jiun Ming Kuo, Wen Chan Chao, Chia Jung Liang, Heng Hsin Wu, Wen Hsien Tzeng, Tzu Liu Wu

^*Corresponding author for this work

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire increases owing to APTS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	811-814
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585607
State	Published - 1 Oct 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Publication series

Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country	China
City	Shanghai
Period	24/03/08 → 27/03/08

Access to Document

10.1109/INEC.2008.4585607

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Chang, K-M., Kuo, J. M., Chao, W. C., Liang, C. J., Wu, H. H., Tzeng, W. H., & Wu, T. L. (2008). The Ge enhance the sensitivity for bio-sensor. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 811-814). [4585607] (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585607

@inproceedings{b03ae16b6d1c41e794933e505959392b,

title = "The Ge enhance the sensitivity for bio-sensor",

abstract = "Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire increases owing to APTS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.",

author = "Kow-Ming Chang and Kuo, {Jiun Ming} and Chao, {Wen Chan} and Liang, {Chia Jung} and Wu, {Heng Hsin} and Tzeng, {Wen Hsien} and Wu, {Tzu Liu}",

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month = oct,

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doi = "10.1109/INEC.2008.4585607",

language = "English",

isbn = "9781424415731",

series = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

pages = "811--814",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "null ; Conference date: 24-03-2008 Through 27-03-2008",

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Chang, K-M, Kuo, JM, Chao, WC, Liang, CJ, Wu, HH, Tzeng, WH & Wu, TL 2008, The Ge enhance the sensitivity for bio-sensor. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585607, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 811-814, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585607

The Ge enhance the sensitivity for bio-sensor. / Chang, Kow-Ming; Kuo, Jiun Ming; Chao, Wen Chan; Liang, Chia Jung; Wu, Heng Hsin; Tzeng, Wen Hsien; Wu, Tzu Liu.

2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 811-814 4585607 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chang, Kow-Ming

AU - Kuo, Jiun Ming

AU - Chao, Wen Chan

AU - Liang, Chia Jung

AU - Wu, Heng Hsin

AU - Tzeng, Wen Hsien

AU - Wu, Tzu Liu

PY - 2008/10/1

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N2 - Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire increases owing to APTS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

AB - Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire increases owing to APTS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

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BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

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