The Ge enhance the sensitivity for bio-sensor

Kow-Ming Chang*, Jiun Ming Kuo, Wen Chan Chao, Chia Jung Liang, Heng Hsin Wu, Wen Hsien Tzeng, Tzu Liu Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire increases owing to APTS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages811-814
Number of pages4
DOIs
StatePublished - 1 Oct 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 Mar 200827 Mar 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period24/03/0827/03/08

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    Chang, K-M., Kuo, J. M., Chao, W. C., Liang, C. J., Wu, H. H., Tzeng, W. H., & Wu, T. L. (2008). The Ge enhance the sensitivity for bio-sensor. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 811-814). [4585607] (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585607