The formation of the hexagonal pyramid facets on wet etching patterned sapphire substrate

Y. C. Chen, F. C. Hsiao, Yew-Chuhg Wu

Research output: Contribution to journalArticlepeer-review

Abstract

Currently, the wet etching patterned sapphire substrate (PSS) has attracted much attention for its high production yield. After etching in hot mixed H 2SO4 and H3PO4 solution, the several etched facets were exposed on sapphire substrate. In this study, a series of etching process was used to investigate the formation. As shown in Fig. 1, when SiO2 mask still remained, the structure of PSS comprised of six facets {3417}. When SiO2 mask were etched away, beside six facets, there were three extra facets { 1105 } exposed on the top.

Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalECS Transactions
Volume50
Issue number42
DOIs
StatePublished - 1 Dec 2012

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