The formation of smooth facets on wet-etched patterned sapphire substrate

Yu Chung Chen, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B1,B2,D1,D and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {1347}, {1014} and {1235}, respectively. On the other hand, the surfaces of Bi ,B2,Di and D2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number2
DOIs
StatePublished - 17 Feb 2014

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