The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate

Zhi Wen Wang; Yan Kuin Su; Chun Yuan Huang; Wei Cheng Chen; Hsin-Chieh Yu

doi:10.1109/EDSSC.2007.4450101

The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate

Zhi Wen Wang^*, Yan Kuin Su, Chun Yuan Huang, Wei Cheng Chen, Hsin-Chieh Yu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	217-220
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450101
State	Published - 1 Dec 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 20 Dec 2007 → 22 Dec 2007

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country	Taiwan
City	Tainan
Period	20/12/07 → 22/12/07

Access to Document

10.1109/EDSSC.2007.4450101

Link to publication in Scopus

Fingerprint Dive into the research topics of 'The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate'. Together they form a unique fingerprint.

Cite this

Wang, Z. W., Su, Y. K., Huang, C. Y., Chen, W. C., & Yu, H-C. (2007). The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 217-220). [4450101] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450101

Wang, Zhi Wen ; Su, Yan Kuin ; Huang, Chun Yuan ; Chen, Wei Cheng ; Yu, Hsin-Chieh. / The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. pp. 217-220 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

@inproceedings{56085840241b4319936d0c6d6e640011,

title = "The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate",

abstract = "In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.",

author = "Wang, {Zhi Wen} and Su, {Yan Kuin} and Huang, {Chun Yuan} and Chen, {Wei Cheng} and Hsin-Chieh Yu",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450101",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "217--220",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "null ; Conference date: 20-12-2007 Through 22-12-2007",

}

Wang, ZW, Su, YK, Huang, CY, Chen, WC & Yu, H-C 2007, The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450101, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 217-220, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450101

The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate. / Wang, Zhi Wen; Su, Yan Kuin; Huang, Chun Yuan; Chen, Wei Cheng; Yu, Hsin-Chieh.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 217-220 4450101 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate

AU - Wang, Zhi Wen

AU - Su, Yan Kuin

AU - Huang, Chun Yuan

AU - Chen, Wei Cheng

AU - Yu, Hsin-Chieh

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.

AB - In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.

UR - http://www.scopus.com/inward/record.url?scp=43049165525&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450101

DO - 10.1109/EDSSC.2007.4450101

M3 - Conference contribution

AN - SCOPUS:43049165525

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 217

EP - 220

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Wang ZW, Su YK, Huang CY, Chen WC, Yu H-C. The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 217-220. 4450101. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450101