@inproceedings{56085840241b4319936d0c6d6e640011,
title = "The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate",
abstract = "In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.",
author = "Wang, {Zhi Wen} and Su, {Yan Kuin} and Huang, {Chun Yuan} and Chen, {Wei Cheng} and Hsin-Chieh Yu",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/EDSSC.2007.4450101",
language = "English",
isbn = "1424406374",
series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",
pages = "217--220",
booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",
note = "null ; Conference date: 20-12-2007 Through 22-12-2007",
}