The fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes grown on GaAs substrate

Zhi Wen Wang*, Yan Kuin Su, Chun Yuan Huang, Wei Cheng Chen, Hsin-Chieh Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages217-220
Number of pages4
DOIs
StatePublished - 1 Dec 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

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