The experimental study of THz image sensor in 0.18 μm CMOS technology

Chih Wei Lai, Wei Cheng Chen, Tzu Chao Yan, Chun Hsing Li, Chien-Nan Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this study, four different types of power detectors are implemented in 0.18 μm CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common-gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages148-150
Number of pages3
ISBN (Electronic)9784902339314
StatePublished - 25 Mar 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014

Publication series

Name2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period4/11/147/11/14

Keywords

  • CMOS
  • Power detector
  • Responsivity
  • THz image

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