The evolution of Ge nanostructures growth on silicon substrate by reduction of GeO 2

Hung Chi Wu, Hsin-Tien Chiu, Chi Young Lee*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Various shaped and sized Ge nanostructures were obtained by reducing GeO 2 powder under a H 2 atmosphere in a high-temperature tubular furnace. At a high depositing temperature region, crystalline Ge film was epitaxially grown on a silicon substrate. Jellyfish-like Ge/SiO 2NWs composite structures were obtained next to germanium epitaxial film grown by Ge-catalyzed vapor-liquid-solid phase segregation mechanism. In addition, at the lower depositing temperature zones, Ge nanowires with various morphologies were formed owing to the temperature and concentration gradient by oxide-assisted vapor-solid mechanism and Ostwald ripening.

Original languageEnglish
Pages (from-to)2190-2195
Number of pages6
JournalCrystEngComm
Volume14
Issue number6
DOIs
StatePublished - 21 Mar 2012

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