The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling

Jian Chen, Fariborz Assaderaghi, Ping Keung Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
Original languageEnglish
Title of host publication1992 IEEE International SOI Conference, SOI 1992 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages84-85
Number of pages2
ISBN (Electronic)0780307763
DOIs
StatePublished - 1 Jan 1992
Event1992 IEEE International SOI Conference, SOI 1992 - Ponte Vedra Beach, United States
Duration: 6 Oct 19928 Oct 1992

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference1992 IEEE International SOI Conference, SOI 1992
CountryUnited States
CityPonte Vedra Beach
Period6/10/928/10/92

Cite this

Chen, J., Assaderaghi, F., Ko, P. K., & Hu, C-M. (1992). The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings (pp. 84-85). [664806] (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1992.664806