The effects of X-ray irradiation on a-IGZO TFTs used for active pixel sensor

Shan Yeh*, Ya Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the behavior of the amorphous indium–gallium–zinc-oxide (a-IGZO) thin film transistors (TFTs) after X-ray irradiation is analyzed. With the increase of irradiation dose, the a-IGZO TFTs show more negative shifts of threshold voltage (Vth), while both the field effect mobility and subthreshold swing (S.S.) keep fairly constant. Not like being a switch in passive pixel sensor (PPS), the Vth shift of the TFT in active pixel sensor (APS) can result in variation in the output signal. With techniques of compensating Vth shift, a-IGZO TFTs are more suitable for the application of X-ray image sensors from the viewpoint of stability.

Original languageEnglish
Title of host publicationMedical Imaging 2020
Subtitle of host publicationPhysics of Medical Imaging
EditorsGuang-Hong Chen, Hilde Bosmans
PublisherSPIE
ISBN (Electronic)9781510633919
DOIs
StatePublished - 2020
EventMedical Imaging 2020: Physics of Medical Imaging - Houston, United States
Duration: 16 Feb 202019 Feb 2020

Publication series

NameProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume11312
ISSN (Print)1605-7422

Conference

ConferenceMedical Imaging 2020: Physics of Medical Imaging
CountryUnited States
CityHouston
Period16/02/2019/02/20

Keywords

  • Active pixel sensor (APS)
  • Amorphous indium–gallium–zinc-oxide (a-IGZO)
  • Thin-film transistor (TFT)
  • Threshold voltage (V)
  • X-ray

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