The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n+ type doped GaAs

D. P. Wang*, K. M. Huang, T. L. Shen, Kai-Feng Huang, T. C. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The electroreflectance (ER) spectra of an undoped-n+ type doped GaAs has been measured at various amplitudes of modulating fields (δF). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When δF is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy-and light-hole transitions. When δF is less than ∼1/8 of the built-in field (Fbi∼77 420 V/cm), the F deduced from the ER is almost independent of δF. However, when larger than this, F is increased with δF. Also, when δF is increased to larger than ∼1/8 of Fbi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as δF becomes larger.

Original languageEnglish
Pages (from-to)476-479
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
StatePublished - 1 Jan 1998

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