The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

Coming Chen, Sun Jay Chang, Jih Wen Chou, Tony Lin, Wen Kuan Yeh, Chun Yen Chang, Wen Zheng Luo, Yao Jen Lee, Tien-Sheng Chao, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

Abstract

A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
DOIs
StatePublished - 1 Jan 2001

Keywords

  • Indium
  • Junction leakage and saturation drive current
  • Mobility
  • Super-steep-retrograde (SSR)

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