The effects of stress on the formation of titanium silicide

S. L. Cheng, H. Huang, Y. C. Peng, L. J. Chen, Bing-Yue Tsui, C. J. Tsai, S. S. Guo, K. H. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi2 formation significantly. On the other hand, tensile stress presented in the silicon substrate was found to promote the formation of TiSi2. In addition, the TiSi2 film thickness was found to decrease and increase with the compressive and tensile stress levels, respectively. The results indicated that compressive stress hinders Si migration through the Ti-Si interface so that the formation of TiSi2 films is retarded. In contrast, tensile stress promotes Si diffusion to facilitate TiSi2 formation.

Original languageEnglish
Title of host publicationProceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages190-192
Number of pages3
ISBN (Electronic)0780342852, 9780780342859
DOIs
StatePublished - 1 Jan 1998
Event1998 IEEE International Interconnect Technology Conference, IITC 1998 - San Firancisco, United States
Duration: 1 Jun 19983 Jun 1998

Publication series

NameProceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Volume1998-June

Conference

Conference1998 IEEE International Interconnect Technology Conference, IITC 1998
CountryUnited States
CitySan Firancisco
Period1/06/983/06/98

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