The effects of plasma treatment on the thermal stability of HfO 2 thin films

Kow-Ming Chang*, Bwo Ning Chen, Shih Ming Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The thermal stability of pure HfO 2 thin films is not high enough to withstand thermal processes, such as S/D activation or post-metal annealing, in modern industrial CMOS production. In addition, plasma nitridation technology has been employed for increasing the dielectric constant of silicon dioxide and preventing boron penetration. In this experiment, atomic layer deposition (ALD) technology was used to deposit HfO 2 thin films and inductively coupled plasma (ICP) technology was used to perform plasma nitridation process. The C-V and J-V characteristics of the nitrided samples were observed to estimate the effect of the nitridation process. According to this study, plasma nitridation process would be an effective method to improve the thermal stability of HfO 2 thin films.

Original languageEnglish
Pages (from-to)6116-6118
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
StatePublished - 30 Jul 2008

Keywords

  • Atomic layer deposition (ALD)
  • Effective oxide thickness (EOT)
  • High-κ
  • Inductively coupled plasma (ICP)

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