The Effects of NH3 Plasma Passivation on Polysilicon Thin-Film Transistors

Fang Shing Wang, Huang-Chung Cheng, Meng Jin Tsai

Research output: Contribution to journalArticlepeer-review

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The NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT‘s). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/μm and the on/off current ratio higher than 108, and also better hot-carrier reliability as well as thermal stability than the H2-plasma ones. These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at Si02/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.

Original languageEnglish
Pages (from-to)503-505
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - 1 Jan 1995

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