The effects of nanometal-induced crystallization on the electrical characteristics of bottom-gate poly-Si thin-film transistors

I. Che Lee*, Po Yu Yang, Ming Jhe Hu, Jyh Liang Wang, Chun Chien Tsai, Chia Tsung Chang, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine thr e e electr ical chara acteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with boE tt lom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thic k Ni film on the amorphous silicon layer and subsequent annealing at 550 °C for 0.5 to 8 h. The EDS revealed a ∼0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.

Original languageEnglish
Pages (from-to)5612-5617
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number7
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Nanometal-Induced Crystallization
  • Nickel
  • Thin-Film Transistor

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