The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure

Jenn-Fang Chen*, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-Å-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.

Original languageAmerican English
Pages (from-to)4432-4435
Number of pages4
JournalJournal of Applied Physics
Volume71
Issue number9
DOIs
StatePublished - 1 Dec 1992

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