The effects of furnace N2O annealing on MOSFETs

Z. H. Liu, J. T. Krick, H. J. Wann, P. K. Ko, Chen-Ming Hu, Y. C. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

26 Scopus citations

Abstract

MOSFETs with 70-110 AA thick furnace N2O-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N2O anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages625-628
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1 Jan 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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