The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors

Yao Jen Lee*, Tien-Sheng Chao, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.

Original languageEnglish
Pages (from-to)5405-5409
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
DOIs
StatePublished - 1 Sep 2003

Keywords

  • DTMOS
  • Gate oxide
  • Subthreshold swing

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