In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|State||Published - 1 Sep 2003|
- Gate oxide
- Subthreshold swing