The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet

Chien Hung Wu*, Kow-Ming Chang, Sung Hung Huang, I. Chung Deng, Chin Jyi Wu, Wei Han Chiang, Je Wei Lin, Chia Chiang Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dense structure. The transistors annealed at 300°C showed clear switching behavior with a negative threshold voltage of -0.571 V and a mobility of 2.6 cm 2/V-s. After 500°C post annealing, IGZO thin film showed an amorphous-like phase and the average transmittance is more than 80% in the visible range. Good electrical characteristics were achieved, including a threshold voltage of 6.74V, a subthreshold swing of 1.54 V/dec, a mobility of 10.31 cm 2/V-s and a large I on/I off ratio of 3.28×10 8.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages189-197
Number of pages9
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

Fingerprint Dive into the research topics of 'The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet'. Together they form a unique fingerprint.

Cite this