The effect of the growth temperature on polyoxide by rapid thermal processing

Kow-Ming Chang, Cheang Lee Tzyh Cheang Lee, Long Sun Yong Long Sun

Research output: Contribution to journalArticle

Abstract

A rapid thermal oxynitridation process using N2O gas as the oxidant has been developed. Due to a smoother polyoxide/polysilicon interface, polyoxide grown by rapid thermal processing has better reliability than that of polyoxide grown by a conventional furnace. Moreover, in order to explore the effects of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown at low temperatures has better reliability than polyoxides grown at high temperature and exhibits improved characteristics such as higher breakdown electric field, less gate voltage shift, and larger charger-to-breakdown.

Original languageEnglish
Pages (from-to)1157-1161
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number3 A
DOIs
StatePublished - 1 Mar 2001

Keywords

  • Charge-to-breakdown
  • Gate voltage shift
  • Oxynitridation
  • Polyoxide
  • Polysilicon

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