A rapid thermal oxynitridation process using N2O gas as the oxidant has been developed. Due to a smoother polyoxide/polysilicon interface, polyoxide grown by rapid thermal processing has better reliability than that of polyoxide grown by a conventional furnace. Moreover, in order to explore the effects of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown at low temperatures has better reliability than polyoxides grown at high temperature and exhibits improved characteristics such as higher breakdown electric field, less gate voltage shift, and larger charger-to-breakdown.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 A|
|State||Published - 1 Mar 2001|
- Gate voltage shift