The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO

H. H. Wang, J. S. Tian, C. Y. Chen, H. H. Huang, Y. C. Yeh, P. Y. Deng, Li Chang, Ying-hao Chu, Y. R. Wu, J. H. He*

*Corresponding author for this work

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Abstract

The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO 3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

Original languageEnglish
Article number7064700
JournalIEEE Photonics Journal
Volume7
Issue number2
DOIs
StatePublished - 1 Apr 2015

Keywords

  • II-VI semiconductor materials
  • Optical films
  • optical polarization
  • photoluminescence
  • strain

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    Wang, H. H., Tian, J. S., Chen, C. Y., Huang, H. H., Yeh, Y. C., Deng, P. Y., Chang, L., Chu, Y., Wu, Y. R., & He, J. H. (2015). The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO. IEEE Photonics Journal, 7(2), [7064700]. https://doi.org/10.1109/JPHOT.2015.2415672