The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO 3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the  polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
- II-VI semiconductor materials
- Optical films
- optical polarization