The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices

Chin-Chun Meng*, Jen Yi Su, Bo Chen Tsou, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A selectively ion-implanted collector (SIC) is implemented in a 0.8 μm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft, and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The ft, is 7.8 GHz and fmax is 9.5 GHz for the SIC BJT device while the ft is 7.2GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6V and Jc=0.07 mA/μm2, The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.

Original languageEnglish
Pages (from-to)520-523
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE89-C
Issue number4
DOIs
StatePublished - 1 Jan 2006

Keywords

  • BJT
  • Selectively implanted collector

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