The effect of remote Coulomb scattering on electron mobility in La 2O 3gate stacked MOSFETs

M. Mamatrishat*, M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

Original languageEnglish
Article number045014
JournalSemiconductor Science and Technology
Volume27
Issue number4
DOIs
StatePublished - 4 Apr 2012

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