The effect of pulsewidth on preparing CuIn1-xGa xSe2 thin film via pulse laser deposition

Shih Chen Chen; Kaung-Hsiung Wu; Fang I. Lai; Takayoshi Kobayashi; Hao-Chung Kuo

doi:10.1109/PVSC.2013.6744168

The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition

Shih Chen Chen, Kaung-Hsiung Wu, Fang I. Lai, Takayoshi Kobayashi, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	365-367
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744168
State	Published - 1 Jan 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

Keywords

Charge carrier lifetime
Photovoltaic cells

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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Chen, S. C., Wu, K-H., Lai, F. I., Kobayashi, T., & Kuo, H-C. (2013). The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 365-367). [6744168] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744168

Chen, Shih Chen ; Wu, Kaung-Hsiung ; Lai, Fang I. ; Kobayashi, Takayoshi ; Kuo, Hao-Chung. / The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 365-367 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{06a644d26da34705816fef697f35bfbc,

title = "The effect of pulsewidth on preparing CuIn1-xGa xSe2 thin film via pulse laser deposition",

abstract = "We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.",

keywords = "Charge carrier lifetime, Photovoltaic cells",

author = "Chen, {Shih Chen} and Kaung-Hsiung Wu and Lai, {Fang I.} and Takayoshi Kobayashi and Hao-Chung Kuo",

year = "2013",

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Chen, SC, Wu, K-H, Lai, FI, Kobayashi, T & Kuo, H-C 2013, The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744168, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 365-367, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744168

The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition. / Chen, Shih Chen; Wu, Kaung-Hsiung; Lai, Fang I.; Kobayashi, Takayoshi; Kuo, Hao-Chung.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 365-367 6744168 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - The effect of pulsewidth on preparing CuIn1-xGa xSe2 thin film via pulse laser deposition

AU - Chen, Shih Chen

AU - Wu, Kaung-Hsiung

AU - Lai, Fang I.

AU - Kobayashi, Takayoshi

AU - Kuo, Hao-Chung

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.

AB - We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.

KW - Charge carrier lifetime

KW - Photovoltaic cells

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

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Chen SC, Wu K-H, Lai FI, Kobayashi T, Kuo H-C. The effect of pulsewidth on preparing CuIn_1-xGa _xSe₂ thin film via pulse laser deposition. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 365-367. 6744168. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744168