The effect of pulsewidth on preparing CuIn1-xGa xSe2 thin film via pulse laser deposition

Shih Chen Chen, Kaung-Hsiung Wu, Fang I. Lai, Takayoshi Kobayashi, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-367
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 1 Jan 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/06/1321/06/13

Keywords

  • Charge carrier lifetime
  • Photovoltaic cells

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