The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet

Chien Hung Wu*, Kow-Ming Chang, Sung Hung Huang, I. Chung Deng, Chia Wei Chi, Chin Jyi Wu, Chia Chiang Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100°C, and oxygen gas was incorporated into plasma gas (N 2) in the percentage of 0%-1% (O 2/N 2+O 2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O 2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm 2/Vs and an I on/I off current ratio of 4.63×10 9 were obtained.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages231-237
Number of pages7
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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