The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet

Chien Hung Wu; Kow-Ming Chang; Sung Hung Huang; I. Chung Deng; Chia Wei Chi; Chin Jyi Wu; Chia Chiang Chang

doi:10.1149/1.3701543

The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet

Chien Hung Wu^*, Kow-Ming Chang, Sung Hung Huang, I. Chung Deng, Chia Wei Chi, Chin Jyi Wu, Chia Chiang Chang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100°C, and oxygen gas was incorporated into plasma gas (N ₂) in the percentage of 0%-1% (O ₂/N ₂+O ₂). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O ₂ into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm ²/Vs and an I _on/I _off current ratio of 4.63×10 ⁹ were obtained.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 13
Pages	231-237
Number of pages	7
Edition	7
DOIs	https://doi.org/10.1149/1.3701543
State	Published - 19 Nov 2012
Event	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	7
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

Access to Document

10.1149/1.3701543

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title = "The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet",

abstract = "Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100°C, and oxygen gas was incorporated into plasma gas (N 2) in the percentage of 0%-1% (O 2/N 2+O 2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O 2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm 2/Vs and an I on/I off current ratio of 4.63×10 9 were obtained.",

author = "Wu, {Chien Hung} and Kow-Ming Chang and Huang, {Sung Hung} and Deng, {I. Chung} and Chi, {Chia Wei} and Wu, {Chin Jyi} and Chang, {Chia Chiang}",

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language = "English",

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pages = "231--237",

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Wu, CH, Chang, K-M, Huang, SH, Deng, IC, Chi, CW, Wu, CJ & Chang, CC 2012, The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet. in Wide-Bandgap Semiconductor Materials and Devices 13. 7 edn, ECS Transactions, no. 7, vol. 45, pp. 231-237, 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/1.3701543

The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet. / Wu, Chien Hung; Chang, Kow-Ming; Huang, Sung Hung; Deng, I. Chung; Chi, Chia Wei; Wu, Chin Jyi; Chang, Chia Chiang.

Wide-Bandgap Semiconductor Materials and Devices 13. 7. ed. 2012. p. 231-237 (ECS Transactions; Vol. 45, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100°C, and oxygen gas was incorporated into plasma gas (N 2) in the percentage of 0%-1% (O 2/N 2+O 2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O 2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm 2/Vs and an I on/I off current ratio of 4.63×10 9 were obtained.

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