The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng*, C. K. Lo, San-Yuan Chen, Y. D. Yao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
StatePublished - 1 Sep 2006

Keywords

  • CoFe/Os/IrMn
  • CoFe/Os/OsMn
  • Mn diffusion
  • Os interlayer
  • Thermal stability

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