The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

Y. H. Wu*, W. J. Chen, Albert Chin, C. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We have investigated the effect of native oxide on the epitaxial SiGe from deposited amorphous Ge on Si. Instead of epitaxial growth by molecular beam epitaxy or ultrahigh-vacuum chemical vapor deposition, the SiGe layer is formed by this simple process followed by an annealing step. As observed by transmission electron microscopy, the suppression of native oxide plays an important role to achieve epitaxial SiGe. The SiGe quality degrades with increasing native oxide thickness and becomes polycrystalline with a ∼20 Åinterfacial native oxide. On the other hand, single crystalline SiGe can be routinely formed from a HF-vapor treated Si surface.

Original languageEnglish
Pages (from-to)528-530
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number4
DOIs
StatePublished - 25 Jan 1999

Fingerprint Dive into the research topics of 'The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si'. Together they form a unique fingerprint.

Cite this