The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

D. S. Yu*, C. C. Liao, C. F. Cheng, Albert Chin, M. F. Li, S. P. McAlister

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Fingerprint Dive into the research topics of 'The effect of IrO<sub>2</sub>-IrO<sub>2</sub>- Hf-LaAlO<sub>3</sub> gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science