The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Wen Jang Jiang, Meng Chyi Wu*, Hsin-Chieh Yu, Chun Yuan Huang, Chia Pin Sung, Jim Yong Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.

Original languageEnglish
Pages (from-to)1945-1948
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
StatePublished - 1 Nov 2002

Keywords

  • Indium tin oxide
  • Vertical-cavity surface-emitting lasers

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