The effect of H 2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system

Man Chi Huang*, Chia Hua Chang, Fang Ming Li, Ching Hsiang Hsu, Binh Tinh Tran, S. S. Tang, Kung Liang Lin, Yueh Chin Lin, Fu Ching Tung, Muh Wang Liang, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature. The HIT solar cell has a very thin emitter layer on the light-incident surface (about 10nm) and the contact region was passivated by hydrogen (H2) plasma treatment to improve solar cell performance. With the passivation, the carrier transport may be enhanced and the extraction of photo current may also be increased. These features can make the Si-bulk absorbs more photons and extract more photo-electric current [1].

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages3001-3004
Number of pages4
DOIs
StatePublished - 1 Dec 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/06/1124/06/11

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