The effect of forming gas anneal on the oxygen content in bonded copper layer

C. S. Tan*, Kuan-Neng Chen, A. Fan, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.

Original languageEnglish
Pages (from-to)1598-1602
Number of pages5
JournalJournal of Electronic Materials
Volume34
Issue number12
DOIs
StatePublished - 1 Jan 2005

Keywords

  • Copper
  • Forming gas
  • Thermocompression bonding
  • Three-dimensional integrated circuits (3-D ICs)

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