The effect of forming gas anneal on the oxygen content in bonded copper layer

C. S. Tan; Kuan-Neng Chen; A. Fan; R. Reif

doi:10.1007/s11664-005-0171-9

The effect of forming gas anneal on the oxygen content in bonded copper layer

C. S. Tan^*, Kuan-Neng Chen, A. Fan, R. Reif

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.

Original language	English
Pages (from-to)	1598-1602
Number of pages	5
Journal	Journal of Electronic Materials
Volume	34
Issue number	12
DOIs	https://doi.org/10.1007/s11664-005-0171-9
State	Published - 1 Jan 2005

Keywords

Copper
Forming gas
Thermocompression bonding
Three-dimensional integrated circuits (3-D ICs)

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title = "The effect of forming gas anneal on the oxygen content in bonded copper layer",

abstract = "Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.",

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AU - Tan, C. S.

AU - Chen, Kuan-Neng

AU - Fan, A.

AU - Reif, R.

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Y1 - 2005/1/1

N2 - Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.

AB - Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.

KW - Copper

KW - Forming gas

KW - Thermocompression bonding

KW - Three-dimensional integrated circuits (3-D ICs)

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