The effect of different carrier gases and channel thicknesses on the characteristics of ZnO TFTs prepared by atmospheric pressure plasma jet

Kow-Ming Chang, Sung Hung Huang*, Chia Wei Chi, Chin Jyi Wu, Je Wei Lin, Chia Chiang Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Thin film transistors (TFTs) with a ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ) were demonstrated. ZnO channel layers were fabricated with a non-vacuum and low-temperature process (100°C). The effects of different carrier gases (nitrogen gas and compressed dry air) and channel thickness on the characteristics of ZnO TFTs were investigated. Reactive oxygen species can effectively repair the oxygen vacancies result in a low leakage current. By reducing the channel thickness, the undesired source to drain current flow can be eliminated. By using CDA as a carrier gas and reducing the channel thickness, a subthreshold swing of 3.75 V/decade, a field-effect mobility of 3.49 cm2/Vs and a Ion/Ioff current ratio of 4.08×107 were obtained.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages199-208
Number of pages10
Edition6
DOIs
StatePublished - 1 Aug 2011
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number6
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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    Chang, K-M., Huang, S. H., Chi, C. W., Wu, C. J., Lin, J. W., & Chang, C. C. (2011). The effect of different carrier gases and channel thicknesses on the characteristics of ZnO TFTs prepared by atmospheric pressure plasma jet. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 199-208). (ECS Transactions; Vol. 35, No. 6). https://doi.org/10.1149/1.3570862