The effect of dc bias on the poled states in PNZST antiferroelectric thin films

Jiwei Zhai*, Xi Yao, Zhengkui Xu, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations


The effect on the polarization of antiferroelectric (AFE) PNZST ((Pb,Nb)(Zr,Sn,Ti)O3) thin films by ε-E (dc bias field) cycles was studied. It was shown that in these films the AFE ordering is destroyed by the application of a dc electrical field bias along the surface normal direction. After removing the dc bias the film relaxes slowly back to the initial AFE state. This phenomenon is dependent on the film thickness. The relaxation time decreases with increasing film thickness. With increasing storage time of the sample after removing the dc bias at room temperature or heat treatment above the Curie temperature, the AFE ordering can return. From the characteristics of hysteresis loops and ε-E behaviours, we can ascertain that this phenomenon could be attributed to the difference in the poled volume at the interfaces between the electrode and the film.

Original languageEnglish
Article number032
Pages (from-to)1811-1815
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number6
StatePublished - 21 Mar 2007

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