The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency

Chen Chen Chung, Binh Tinh Tran, Hau Vei Han, Yen Teng Ho, Hung Wei Yu, Kung Liang Lin, Hong Quan Nguyen, Peichen Yu, Hao Chung Kuo, Edward Yi Chang

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I-V measurement.

Original languageEnglish
Pages (from-to)457-460
Number of pages4
JournalElectronic Materials Letters
Volume10
Issue number2
DOIs
StatePublished - 1 Jan 2014

Keywords

  • CdS
  • quantum dots
  • triple-junction solar cell

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