The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage

T. C. Chang, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, S. M. Sze

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

The integration process, low-k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielectric constant is maintained at a low value after photoresist removal. These experimental results show that NH3 treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process.

Original languageEnglish
Pages (from-to)632-636
Number of pages5
JournalThin Solid Films
Volume398
Issue number399
DOIs
StatePublished - 1 Jan 2001

Keywords

  • Ammonia
  • Hybird-organic-siloxane-polymer
  • Photoresist stripping

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