The effect of Al and Ni top electrodes in resistive switching behaviors of Yb2O3-based memory cells

Somnath Mondal, Jim Long Her, Fu-Hsiang Ko, Tung Ming Pan

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this letter, the effect of Al and Ni top electrodes in resistive switching behavior of Al/Yb2O3/TaN and Ni/Yb 2O3/TaN memory devices is proposed. The Al/Yb 2O3/TaN memory device demonstrates no such switching performance as applying bias on both top and bottom electrodes, whereas the Ni/Yb2O3/TaN reveals the bipolar memory switching behavior with a high resistance ratio of 104 for over 200 cycles of switching responses and good data retention with memory window of about 105 at 85°C, as extrapolated up to 10 years. The resistance switching dynamic is ascribed to the conductivity modulation by oxygen ions/vacancies controlled electrochemical reaction process in the Yb2O3 switching layer.

Original languageEnglish
JournalECS Solid State Letters
Volume1
Issue number2
DOIs
StatePublished - 1 Dec 2012

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