The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.
|Number of pages||4|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|State||Published - 1 Jun 2000|
|Event||The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China|
Duration: 13 Jun 1999 → 18 Jun 1999
- P-type doping
- P-type GaN film