The doping process of p-type GaN films

G. G. Chi*, Cheng-Huang Kuo, J. K. Sheu, C. J. Pan

*Corresponding author for this work

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.

Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume75
Issue number2-3
DOIs
StatePublished - 1 Jun 2000
EventThe IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China
Duration: 13 Jun 199918 Jun 1999

Keywords

  • P-type doping
  • P-type GaN film

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