The development of CMOS amperometric sensing chip with a novel 3-dimensional TiN nano-electrode array

Chun Lung Lien, Chiun-Jye Yuan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An electrochemical sensing chip with an 8 × 8 array of titanium nitride three-dimensional nano-electrodes (TiN 3D-NEA) was designed and fabricated via a standard integrated complementary metal oxide semiconductor process. Each nano-electrode in 3D-NEA exhibited a pole-like structure with a radius of 100 nm and a height of 35 nm. The numeric simulation showed that the nano-electrode with a radius of around 100 nm exhibited a more uniformly distributed electric field and a much higher electric field magnitude compared to that of the microelectrode. Cyclic voltammetry study with Ru(NH 3 ) 6 3+ also revealed that the TiN 3D-NEA exhibited a much higher current density than that obtained from the microelectrode by two orders of magnitude. Further studies showed that the electrocatalytical reduction of hydrogen peroxide (H 2 O 2 ) could occur on a TiN 3D-NEA-based sensing chip with a high sensitivity of 667.2 mA·mM −1 ·cm −2 . The linear detection range for H 2 O 2 was between 0.1 µM and 5 mM with a lowest detection limit of 0.1 µM. These results indicated that the fabricated TiN 3D-NEA exhibited high catalytic activity and sensitivity to H 2 O 2 and could be a promising sensor for H 2 O 2 measurement.

Original languageEnglish
Article number994
JournalSensors (Switzerland)
Volume19
Issue number5
DOIs
StatePublished - 1 Mar 2019

Keywords

  • 3D Sensor
  • CMOS
  • Hydrogen peroxide
  • Nano-electrode
  • Titanium nitride

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