The determination of S-Parameters from the poles of voltage-gain transfer function for RF IC design

Shey Shi Lu*, Yo Sheng Lin, Hung Wei Chiu, Yu Chang Chen, Chin-Chun Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.

Original languageEnglish
Pages (from-to)191-199
Number of pages9
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume52
Issue number1
DOIs
StatePublished - 1 Jan 2005

Keywords

  • Broad-band amplifier
  • Poles
  • S-parameters
  • Transfer function

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