The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation

Ya-Hsiang Tai; Hao Lin Chiu; Lu Sheng Chou

doi:10.1149/2.025206jes

The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation

Ya-Hsiang Tai^*, Hao Lin Chiu, Lu Sheng Chou

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) transfer curve is studied. The I _D-V _G curves of a-IGZO TFTs with sourcedrain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO ₄ to confirm the role of copper in the deterioration of the I _D-V _G curves. The hypothesis is also verified through ATLAS device simulator.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	5
DOIs	https://doi.org/10.1149/2.025206jes
State	Published - 9 Apr 2012

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title = "The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation",

abstract = "In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) transfer curve is studied. The I D-V G curves of a-IGZO TFTs with sourcedrain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO 4 to confirm the role of copper in the deterioration of the I D-V G curves. The hypothesis is also verified through ATLAS device simulator.",

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T1 - The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation

AU - Tai, Ya-Hsiang

AU - Chiu, Hao Lin

AU - Chou, Lu Sheng

PY - 2012/4/9

Y1 - 2012/4/9

N2 - In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) transfer curve is studied. The I D-V G curves of a-IGZO TFTs with sourcedrain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO 4 to confirm the role of copper in the deterioration of the I D-V G curves. The hypothesis is also verified through ATLAS device simulator.

AB - In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) transfer curve is studied. The I D-V G curves of a-IGZO TFTs with sourcedrain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO 4 to confirm the role of copper in the deterioration of the I D-V G curves. The hypothesis is also verified through ATLAS device simulator.

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