The CMOS integrated 3-GHz to 11-GHz transmitter for full-band UWB applications is proposed and designed in 0.13-μm CMOS technology. The designed UWB transmitter is integrated with a 2:1 frequency divider, a quadrature up-conversion mixer, a balanced RF amplifier, and a 3-stage cascaded poly-phase filter. The technique of inductance peaking has been adopted to achieve 14-band operation for UWB applications. The transmitter has an average conversion gain of 12.8 dB with the gain ripple of around ±1.4 dB among the whole frequency band. The average input 1-dB compression point (IP -1dB) of the 14 bands is -12.2 dBm and the average output 1-dB compression point (OP-1dB) of the 14 bands is -0.4 dBm. The transmitter dissipates the power of 53.1 mW from the supply voltage of 1.2 V and occupies the chip area of 1930x1635 μm2. This chip is designed in 0.13-μm 1P8M CMOS technology and under fabrication.