The demonstration of low-cost and logic process fully-compatible OTP memory on advanced HKMG CMOS with a newly found dielectric fuse breakdown

E. R. Hsieh, Z. H. Huang, Steve S. Chung, J. C. Ke, C. W. Yang, C. T. Tsai, T. R. Yew

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

For the first time, the dielectric fuse breakdown has been observed in HKMG and poly-Si CMOS devices. It was found that, different from the conventional anti-fuse dielectric breakdown, such as the hard and soft breakdowns, this new fuse-breakdown behavior exhibits a typical property of an open gate and can be operated in much lower programming current (< 50μA), fast speed (∼20μsec), and excellent data retention, in comparison to the other fuse mechanisms. Based on this new mechanism, we have designed a smallest memory cell array which can be easily integrated into state-of-the-art advanced CMOS technology to realize highly reliable, secure, and dense OTP functionality with very low cost to meet the requirements of memory applications in the IoT era.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3.4.1-3.4.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - 16 Feb 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

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