The degradation of MILC P-channel poly-Si TFTs under dynamic hot-carrier stress using a novel test structure

Cheng I. Lin*, Wen Chiang Hong, Tin Fu Lin, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, dynamic hot carrier effect in the MILC p-channel TFT device has been characterized by the unique struture. This novel structure is capable of spatially resolving the hot carrier effect and is highly sensitive to detect the defect-rich region. The dynamic hot carrier stress has been focused on the impacts of the frequency, the rise time and the fall time. In varied frequency stress condition, the degradation in the drain-sided monitor transistor (DMT) increases monotonically with increasing frequency, infering that more defects are generated by extra dynamic stress contribution in the drain side and degrade the characteristic of device. Under varied fall time stress condition, the oncurrent degradtion is severe with decreasing fall time due to the extra voltage drop during voltage switch. The final part is effect of rise time. While device switches, the large voltage drop exists in the junction between the channel and the drain, which resulted in another hot carrier degradation.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages889-900
Number of pages12
Edition4
DOIs
StatePublished - 2 Aug 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

Fingerprint Dive into the research topics of 'The degradation of MILC P-channel poly-Si TFTs under dynamic hot-carrier stress using a novel test structure'. Together they form a unique fingerprint.

Cite this