The Current Behaviors of the Amorphous In-Ga-Zn-O Thin-Film Transistor under Varying Illumination Conditions

Ya-Hsiang Tai, Chun Yi Chang, Ya Wei Chen

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this study, the time response behavior of the amorphous indium-gallium zinc-oxide (a-IGZO) thin-film transistors (TFTs) to the illumination pulse is analyzed. We modified the previously proposed fitting formula by changing the fitting parameters from constant to time dependent. The mechanism for the response behaviors is proposed based on the analysis of the fitting parameters with respect to measurement time and under different light intensities. The single-pulse measurement results and their corresponding fitting parameters is used as the database to predict the current behaviors of the TFTs under multi-pulse illumination. The predicted and measured results fit fairly well. The method to formulize the time response for the a-IGZO TFT under varying situations of illumination is thus developed, which can be important in the design and simulation of transparent electronic circuits.

Original languageEnglish
Article number7297796
Pages (from-to)351-356
Number of pages6
JournalJournal of Display Technology
Volume12
Issue number4
DOIs
StatePublished - 1 Apr 2016

Keywords

  • amorphous indium gallium zinc oxide (a-IGZO)
  • Multi-pulse illumination
  • response time
  • Thin-film transistor (TFTs)

Fingerprint Dive into the research topics of 'The Current Behaviors of the Amorphous In-Ga-Zn-O Thin-Film Transistor under Varying Illumination Conditions'. Together they form a unique fingerprint.

  • Cite this